Gallium Phosphide Wafers

(Currently in very limited supply)

 2 inch (50.8 mm) diameter 

Available Orientations:

(100) and (111) +/- 0.1 - 0.5^o

Off Orientations available upon request

Undoped:

N-Type

Carrier Concentration < 1 x 10¹⁶ cm^-3

Etch Pit Density (EPD) < 2 x 10⁵ cm^-2

Mobility: 110 - 160 cm²/V.sec

Semi conducting:

N-Type, Sulfur doped

P-Type, Zinc doped

Carrier Concentration > 1 x 10¹⁷ cm^-3

Etch Pit Density (EPD) < 2 x 10⁵ cm^-2

Mobility: 80 - 140 cm²/V.sec

Surface Finish:

         1 Face Polished, Epi Ready, Back Face Lapped and Etched

         2 Faces Polished, Epi Ready

         2 Faces Lapped or As Sawn Finish

Wafer Thickness:

         2 inch diameter x 300 microns

(other thicknesses upon request)