Quartz Single Crystal

SiO₂

SiO₂, Quartz Substrates are ideal for use as substrates for thin film research and are also suitable for many optical applications. Quartz wafers have excellent chemical resistance against a wide variety of solvents, as well as exceptional heat resistance, with high dimensional stability over a wide temperature range.

Single crystal quartz wafers are ideal for use as substrates for thin film deposition and are also suitable for many optical applications. Quartz single crystal wafers and substrates are also used as microwave filters in wireless communication.

Typical Single Crystal Quartz Properties:

Formula:                                    SiO₂

Purity:                                        SAW Grade > 99.9 wt%, Optical Grade > 99.99%

Available Orientations:           Y, X, or Z cut, rotated to any range 30^o ~ 42.75^o (+/- 5 min) 

Crystal Structure:                    Hexagonal; a = 4.914 Å, c = 5.405 Å

            Growth Method:                      Hydrothermal

Density:                                     2.684 gm/cm³

           Hardness:                                  1.0 Moh’s

           Melting Point:                           1610^oC

           Specific Heat:                           0.18 cal/gm

           Thermoelectric Constant:      1200 μV/^oC (at 300 ^oC)

           Thermal Conductivity:            0.0033 cal/cm/^oC

           Refractive Index:                      1.544

           Q Value:                                     1.8 x 10⁶ min.

          Acoustic Velocity:                     3160 m/sec (SAW)

          Frequency Constant:                1661 kHz/mm (BAW)

          Polishing, Roughness:              1 side, both sides, as cut, Ra < 10 Å