Tin (II) Sulfide Sputtering Target

SnS

Purities available:               99% to 99.5%

                  Applications:

                            • PVD and CVD display
                             • Semiconductor

                            • Optical, solar cell

Tin sulfide is useful as a semiconductor material with band gap 2.2 eV. Films were RF sputtered from a SnS and SnS₂ target to produce films with varying microstructure. Growth of high energy phases including beta-SnS and amorphous SnS₂ were possible through sputtering.

Tin Sulfide (SnS) is commonly used in the electronic industries and produced by the hot press technique.

                  Specifications:

                            Compound Formula:                   SSn

                            Molecular Weight:                       150.78

                            Appearance:                                 dark brown solid

                            Melting Point:                                882 °C (1620 °F)

                            Boiling Point:                                 1230 °C (2246 °F)

                            Density:                                          5.22 g/cm³

                            Monoisotopic Mass:                     151.874267

Tin (II) Sulfide Sputtering Targets should be bonded to a proper backing plate. Elastomer or Indium bonding is recommended.

Tin (II) Sulfide Targets are available as circular or rectangular targets of 1 inch to 12 inch diameters and up to 16 inch lengths. Thickness is 1 mm or greater.

Custom sizes are available upon request.