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Yttrium Fluoride


YF3



99.995% pure

 

Form:  This material is supplied in a compact form as tablets. Yttrium Fluoride is made via the DF method. It contains very little oxygen, chlorine and will show almost no spitting and out-gassing.

 

Applications:  Yttrium Fluoride films can be deposited by resistance-heated or e-beam evaporation. The film density and refractive index increases with the temperature of the substrate. Amorphous films exhibiting low scatter can be deposited below 150oC substrate temperature but at that point the adhesion and refractive indexes can be compromised. Above about 250oC, the films become harder and more crystalline, while exhibiting noticeable scatter and more stress. High substrate temperature and e-beam depositions reduce the depth of water absorption bands at 3 microns and 5.5 - 7.5 microns.

Yttrium Fluoride yields low index film layers that exhibit good transparency and show low stress. They make YF3 an extremely suitable alternative to ThF4 in IR applications.

 

Typical Analysis:

Al           < 1 ppm                               Mo               < 1 ppm

Co         < 2                                        Ni                 < 2

Cr          < 2                                        Pb                < 1

Cu         < 0.5                                    Si                  < 1

Fe             0.8                                    Ti                 < 1

Mn         < 2                                        V                 < 1


Optical Properties:

Transparency Range:           200 nm - 14000 nm         Solubility                     Insoluble In H2O

Refractive Index:                    1.55 at 220 nm                 Density:        5.07 gm/cc

                                                  1.51 at 500 nm                 Melting Point:          2687oC

                                                  1.3 - 1.4 at 1000 nm                                         

Evaporation Temperature:    1100oC                              Pressure:                     < 1 x 10-5 mbar

Substrate Temperature:        100 - 150oC                      Deposition Rate:        1.5 nm/sec

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